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Energy-Harvesting ICs Explained: How the LTC3108 Works & 5 Maker Project Ideas

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Energy-harvesting power management ICs (PMICs) like the LTC3108 allow for the creation of battery-free electronic devices by converting ultra-low ambient energy into regulated power. While once restricted to university labs, these ICs are now advanced enough that a maker with a soldering iron and a $10 Thermoelectric Generator (TEG) can build a wireless sensor node in a single day.

The LTC3108, originally from Linear Technology (now Analog Devices), is the industry-standard “cold-start” harvester. Its ability to start from as little as 20 mV—the temperature gradient of a human handmakes it the de facto choice for industrial IoT, wearables, and edge computing. In this deep-dive, we analyze the LTC3108 internal architecture, compare it against competitors like the BQ25570, and provide five field-tested project schematics for your next batteryless design.

This article explains how the IC actually works and its performance in comparison to alternative energy harvesting ICs, and presents five practical projects built around the device.

Why Battery-Free Electronics Are Now Practical

The ambient energy landscape: sources and what they actually deliver

Ambient energy harvesting takes advantage of existing energy sources within the surrounding environment, such as differences in temperature, light, vibration, and RF fields. While none of these sources are as energy-dense as the lithium-ion batteries, they can still provide sufficient power for devices that only transmit small amounts of data.

The table below outlines common energy-harvesting sources, their typical real-world energy densities, and families of integrated circuits best suited to those harvesting technologies. The energy densities come from MDPI Energies publications and Analog Devices application notes.

Where energy-harvesting ICs fit in the signal chain

Source Typical Transducer Typical Output Voltage Outdoor / Industrial Indoor Power Density Suitable ICs
Thermal (TEG) Peltier cell acting as TEG 20–500 mV Up to 1 mW/cm² (industrial heat) 25–100 µW/cm² LTC3108, LTC3109, BQ25570
Solar / PV Monocrystalline small cell 0.4–5 V 100+ µW/cm² (outdoor) 10–100 µW/cm² (fluorescent) SPV1050, BQ25570, MAX20361
Piezoelectric PZT cantilever AC, 1–50 V peak 1–3 mW near machinery 4–500 µW (vibration dependent) LTC3588-1, BQ25570
RF Energy Rectenna / dipole 100–500 mV rectified Up to 100 µW near 5G base stations 0.1–10 µW at 1–3 m P2110, Powercast P21XXCSR
Electromagnetic Induction Current transformer (CT) 0.5–5 V AC Up to 2 mW from 100+ A lines 50–500 µW from 5 A lines LTC3108, custom bridge

Raw signals from the transducers cannot be used. For example, a TEG may generate 80 mV at a 50 mA short circuit current; however, any practical digital system requires a regulated supply voltage like 3.3 V or 2.2 V. The energy harvesting IC bridges this gap by amplifying the millivolt input, managing a storage component, and giving out a regulated output with signaling for power good status.

Block diagram showing transducer → LTC3108 harvesting IC → supercapacitor storage → MCU and radio load, with PGD feedback loop. 

Inside the LTC3108: Architecture and Working Principle

The LTC3108 DC/DC converter manufactured by Analog Devices is designed specifically to extract and convert energy from very low-voltage power sources such as TEGs, thermopiles, and small photovoltaic cells. A clear understanding of its internal architecture is essential before beginning any circuit design.

⚡ Key Technical Points — LTC3108 at a Glance
20 mV
Minimum cold-start input voltage (with 1:100 transformer)
4 options
Fixed VOUT voltages: 2.3 V, 3.3 V, 4.1 V, 5 V
2.2 V
Fixed LDO output for microcontroller supply
≤ 3 Ω
Maximum recommended TEG source resistance
15–40%
Conversion efficiency (varies with VIN 20–500 mV)
DFN-12 / SSOP-16
Package options (3×4 mm and 16-lead)

Armstrong oscillator topology: bootstrapping from 20 mV

The question of system start-up if input voltage is not sufficient for powering ordinary CMOS logic is one of the most essential issues associated with the design of harvesting circuits. The LTC3108 solves this problem by means of applying a resonant step-up topology that exploits the Armstrong oscillator technique.

A step-up transformer with an external turns ratio (typically 1:100 with a minimum voltage input) is connected between VIN and SW pins of the chip. The latter provides a resonant oscillator which is constructed by means of utilizing a primary coil of a transformer along with a capacitor (C1; typical values 4.7-10 nF). With each cycle of the resonance procedure, the secondary side of the transformer multiplies the voltage so much that the diodes get forward-biased. Current rectification is conducted to VAUX. When VAUX equals approximately 0.5V (the threshold level that can be identified by the IC itself), a standard boost conversion procedure is carried out.

Thus, as we can conclude from the above discussion, the cold start-up from as low as 20mV is accomplished via a two-step procedure (oscillator → boost regulation) where the first stage requires minimal currents due to the resonance circuitry.

 Detailed block diagram of LTC3108 internal stages including Armstrong oscillator, VAUX rectifier, synchronous boost converter, voltage-select logic, 2.2V LDO, PGD comparator, VOUT and VSTORE outputs.

Synchronous boost converter: VOUT regulation and output sequencing

When sufficient charge exists on VAUX, the IC will transition from charging VAUX to operating as a boost converter. Internally, MOSFET switches will control the flow of energy out of VAUX to the VOUT capacitor. The output voltage delivered to the load is determined by two external pins (VS1 & VS2), which are selected by a resistor-trimmed internal reference. There is no external feedback resistor divider circuit; therefore, the four voltage options available are hard-programmed into the IC, thus simplifying layout by removing any potential for output voltage drift due to resistor tolerances.

The order of output voltage power-up is via sequencing as follows after a cold-start sequence: VAUX charges first, then 2.2V LDO (VLDO) powers up, then VOUT will power up to its programmed output voltage, and finally, the excess energy will discharge into VSTORE. Once VOUT has reached 7.5% from the target, PGD will go high, providing an indication to the MCU that it is safe for operation to begin.

VSTORE: energy buffering and blackout operation

The VSTORE pin is connected to the supercapacitor that serves as the external energy storage device (ESD), typically ranging from 100 µF to 0.1 F.  When VAUX is present, VSTORE will be charged by the IC, but this charging is the secondary priority compared to VAUX charging. If the harvesting source is not present, such as when a TEG stops receiving its thermal energy source, the IC automatically turns to VSTORE to regulate VOUT. This switchover occurs seamlessly without the need for any external control circuitry.

LTC3108 vs LTC3108-1: which variant to choose

The LTC3108 and LTC3108-1 devices have the same pin layout, but their VS1/VS2 programming tables have been mapped to different output voltages. The LTC3108 provides four different output levels (2.3V, 3.3V, 4.1V, & 5V), while the LTC3108-1 has four other output levels (2.5V, 3.0V, 3.7V, & 4.5V). 

Therefore, the LTC3108 is best suited for a load requiring a 3.3V output voltage (this is typically the most common voltage in today’s microcontrollers). Conversely, if your load is a radio or sensor that requires either a 3.0V or 3.7V output voltage (for example, some Bluetooth low energy or BLE), or if your load is going to charge a lithium-ion (Li-Ion) battery at up to 4.2V, you will be best off using the LTC3108-1.

Analog Devices LTC3108IDE#PBF energy harvesting PMIC – boost converter 12-DFN specifications and technical support at Flywing

LTC3108 Pin Reference and VOUT Configuration

The following table consolidates pin functions from the ADI LTC3108 datasheet (Rev. D). This is the most concise single-page reference available for design work.

LTC3108 Pin Function Reference

LTC3108 Pin Function Reference
DFN-12 & SSOP-16 Packages  ·  Source: Analog Devices Datasheet Rev. D
Pin Name DFN-12 SSOP-16 Function Key Design Note
C1, C2 1, 2 1, 2 Coupling capacitor pins for oscillator External capacitor (4.7–10 nF) is required here. Oscillation frequency depends critically on this network.
SW 3 3 MOSFET switch output; connects to transformer primary Supports up to 500 mA. Trace resistance must be minimized since even small drops reduce efficiency.
VOUT2 Switched secondary output (connected to VOUT via 1.3 Ω P-ch switch) This pin remains open until VOUT2_EN is driven high. Soft-start is approximately 5 µs, with peak current limited to 0.3 A.
VLDO 2.2 V LDO output for MCU supply A minimum 2.2 µF ceramic capacitor is required to ground. Continuous output current is limited to 4 mA.
PGD Power-good open-drain output When VOUT is within ±7.5%, the output goes high. If VOUT drops more than 9%, it is pulled low. Use only as MCU GPIO, not for LED driving.
VAUX Intermediate rectified storage node A 1 µF ceramic capacitor should be connected here. This node bootstraps internal circuitry and must not be externally loaded.
VSTORE Storage element input/output Supercapacitor range is 100 µF to 0.1 F. Choose a low-leakage type; Panasonic EECEN or AVX TPSX series are recommended.
VOUT 4 Regulated main output A low-leakage capacitor is required. Tantalum or ceramic types should be selected based on load burst requirements.

VOUT Voltage Selection — VS1 & VS2 Pin Programming

Table 3 VOUT Voltage Selection — VS1 & VS2 Pin Programming
Applies to LTC3108 and LTC3108-1  ·  Tie VS1 / VS2 to GND or VAUX as shown
VS1 VS2 LTC3108 VOUT LTC3108-1 VOUT Typical Load Application
GND GND 2.3 V 2.5 V Ultra-low-power MCUs MSP430, SAMD21 at 1.8 V min
GND VAUX 3.3 V 3.0 V Most Common nRF52, ESP32-S3, STM32, LoRa modules Standard 3.3 V MCU / radio rail
VAUX GND 4.1 V 3.7 V Li-ion thin film charging Requires external charger IC
VAUX VAUX 5.0 V 4.5 V Supercapacitor stack charging, 5 V sensors Highest output — size VOUT cap accordingly
● VAUX = tie pin to VAUX node ● GND = tie pin to ground ★ 3.3 V = most common choice for makers

Energy-Harvesting IC Landscape: LTC3108 vs BQ25570 vs SPV1050 and Others

The LTC3108 is not the only chip available, and sometimes, it may not be the best one to choose. Since 2020, the options for ICs that can be used for energy harvesting have expanded drastically, and picking the wrong chip can make energy generation 30–50% less efficient.

IC Manufacturer Min Cold-Start MPPT Best Source VOUT Range Quiescent IQ Package
LTC3108 ★ Featured IC Analog Devices 20 mV TEG, thermopile, small PV 2.3–5 V (fixed 4) ~6 µA DFN-12 / SSOP-16
LTC3109 Analog Devices 30 mV TEG (bipolar / AC input) 2.35–5 V (fixed 4) ~6 µA SSOP-20
BQ25570 Texas Instruments 100 mV ✓ programmable Solar, TEG, piezo 1.8–5.5 V (adj.) ~330 nA QFN-20 (3.5×3.5 mm)
SPV1050 STMicroelectronics 50 mV ✓ resistor-set Solar + TEG dual 1.8 V, 3.3 V LDOs + unreg. ~8 µA QFN-20 (4×4 mm)
AEM20940 e-peas 50 mV ✓ internal Solar, TEG, RF 1.2–4.5 V (adj.) ~800 nA QFN-24 (4×4 mm)
EM8900 EM Microelectronic 5 mV Lowest in class TEG (ultra-low gradient) 1.2–3.3 V ~400 nA WLCSP (ultra-small)
★ LTC3108 = featured IC in this guide   |   ✓ MPPT supported   |   ✗ No MPPT   |   mV = cold-start threshold   |   IQ = quiescent current

Texas Instruments BQ25570

The BQ25570 has utilized a completely different method than previous designs. Instead of utilizing an Armstrong Oscillator to generate the output voltage, it employs a nano-power hysteretic boost converter that has the ability to cold-start at 100 mV (or 50 mV with MPPT pre-bias). 

What distinguishes the BQ25570 from other devices is its integrated Maximum Power Point Tracker (MPPT). In essence, when connected to a power source via the OC_SEP pin, the IC samples the power source’s open circuit voltage (Voc) continuously and always adjusts its working point in order to draw the maximum available power from the power source. As a result of this capability, the BQ25570 improves efficiency significantly when solar panels are used as a power source, since solar panels have a non-linear I-V curve based on the amount of light and temperature they are under during operation.

Additionally, the BQ25570 has a quiescent current of approximately 330 nA versus the LTC3108 with an approximately 3 µA quiescent current; thus, making it much more suitable for use in always-on monitoring applications.

When to choose BQ25570 over LTC3108: Your source is primarily solar, your available input is above 100 mV, and maximizing harvested watts matters more than cold-start voltage.

STMicroelectronics SPV1050

The SPV1050 is specifically intended for use in applications where simultaneous energy harvesting from two distinct types of energy sources (for example: A photovoltaic cell paired with a thermoelectric generator) is desired. The device features two independent regulated LDO outputs (1.8 V and 3.3 V) as well as an unregulated output stage, and it is configured to provide maximum power point tracking (MPPT) remotely using an external resistor divider. This capability provides flexibility so MPPT can be adjusted based on the characteristics of the solar panel used in the application. Additionally, both end-of-charge thresholds and under-voltage lockout thresholds can be externally trimmed for direct connection to thin-film batteries.

e-peas AEM20940 and EM Micro EM8900

In cases where the temperature difference between the hot and cold sources is very low, such as in body-worn energy harvesters with less than 2°C difference between skin and air temperatures, the EM8900 will function using an input voltage as low as 5 millivolts. The AEM20940 IC offers cold start operation below 50 millivolts, as well as three different modes of energy harvesting.

IC Selection Decision Guide

Selecting the right energy-harvesting IC depends on the input source, startup voltage requirements, and efficiency priorities. The following guide summarizes the most suitable choices based on application needs:

IC Selection Decision Guide
Cold-start < 30 mV required
LTC3108 or EM8900
Primarily solar / PV source
BQ25570 or SPV1050 (MPPT critical)
Dual-source harvesting (PV + TEG)
SPV1050 or AEM20940
Lowest quiescent current priority
BQ25570 (330 nA) or EM8900 (400 nA)
Bipolar / AC TEG input
LTC3109 (pin-compatible with LTC3108)

Pairing the LTC3108 with Real-World Energy Sources

Thermoelectric generators: what the datasheet does not tell you

Choosing a TEG for use with the LTC3108 involves a compromise between three conflicting characteristics: Seebeck coefficient (V/K), source resistance (Ω), and size. Notably, the data sheet of the LTC3108 specifies source resistance ≤ 3 Ω for efficient power generation. The source resistance of miniature Peltier coolers used as TEGs is in the range 1-4 Ω, depending on temperature. Source resistance should be measured at the actual working temperature and not at room temperature.

A 40 mm × 40 mm TEG with a temperature difference of 10°C across its surfaces produces about 4 mW when optimally matched for the LTC3108 application, which would be enough to power a wireless temperature logger taking measurements every five minutes. In order to keep the temperature difference of 10°C, proper heatsinking is necessary on the side exposed to lower temperatures. Without a heatsink, the temperature difference collapses to 2-3°C due to convective losses.

Annotated schematic of LTC3108 energy harvesting circuit with TEG, transformer, capacitors, supercapacitor storage, MCU and radio load, and PGD wake signal connection. 

Transformer selection for the LTC3108

The transformer is the single most performance-critical external component. ADI recommends three transformer options depending on the input voltage range:

Source Typical Transducer Typical Output Voltage Outdoor / Industrial Indoor Power Density Suitable ICs
Thermal (TEG) Peltier cell acting as TEG 20–500 mV Up to 1 mW/cm² (industrial heat) 25–100 µW/cm² LTC3108, LTC3109, BQ25570
Solar / PV Monocrystalline small cell 0.4–5 V 100+ µW/cm² (outdoor) 10–100 µW/cm² (fluorescent) SPV1050, BQ25570, MAX20361
Piezoelectric PZT cantilever AC, 1–50 V peak 1–3 mW near machinery 4–500 µW (vibration dependent) LTC3588-1, BQ25570
RF Energy Rectenna / dipole 100–500 mV rectified Up to 100 µW near 5G base stations 0.1–10 µW at 1–3 m P2110, Powercast P21XXCSR
Electromagnetic Induction Current transformer (CT) 0.5–5 V AC Up to 2 mW from 100+ A lines 50–500 µW from 5 A lines LTC3108, custom bridge

5 Maker Projects Using Energy-Harvesting ICs

Each project below contains a minimal bill of materials and a power budget table. Consequently, power budgets are estimated based on the target duty cycle. All the components are forecasted to be in production by 2025 and available at Fly-Wing Tech. 

PROJECT 01

Body-Heat Powered Temperature + Humidity Sensor Node

TEG on wrist → LTC3108 → nRF52840 → BLE beacon every 60 sec
Harvesting IC
LTC3108
Transformer
LPR6235 1:100
Storage
0.1 F / 5 V supercap
MCU
nRF52840 (Nordic)
Sensor
SHT31 (T/H)
VOUT SET
3.3 V

The small TEG (15 mm × 15 mm, e.g., Laird UTG-57-40-F2) is placed onto the wrist using a clamp with low thermal resistance. The temperature of the skin (~34°C) and environment (~22°C) results in ~12°C dT. For 15 mm TEG operating with this dT, about 80–150 µW of power can be produced, dependent on the quality of the heatsink. After that, once the supercapacitor is charged by the LTC3108, the nRF52840 wakes up from the System OFF mode.

Power Budget — Project 1

Power Consumption Summary Table
Component State Current Duration / Duty Average Power
nRF52840 System OFF sleep 0.4 µA ~59.5 sec 0.4 µW @ 3.3 V
nRF52840 Active + BLE TX ~7 mA peak ~500 ms per min ~58 µW avg
SHT31 sensor Measure + idle 0.2 µA idle / 1.5 mA meas. 2 ms measure ~0.1 µW avg
LTC3108 Quiescent (always on) ~6 µA @ VIN Continuous ~0.3 µW
Total average ~59 µW
TEG available 12°C dT, 15 mm TEG 80–150 µW

BUILD NOTE

Use the VOUT2_EN pin to disconnect the nRF52840’s VDD entirely between transmissions. This reduces system sleep current to the LTC3108 quiescent + SHT31 idle only (~6.6 µA total). The PGD pin connected to the nRF52840 P0.04 GPIO triggers wakeup in under 10 µs.

PROJECT 02

Window-Mounted Indoor Solar Air Quality Monitor

Small PV cell → BQ25570 (MPPT) → ESP32-S3 deep sleep → LoRa uplink every 15 min
Harvesting IC
BQ25570
PV Cell
IXYS SLMD121H10L
Storage
0.47 F + LiFePO4
MCU
ESP32-S3 @ 20 MHz
Sensor
SCD41 (CO2/T/H)
Radio
SX1262 LoRa

MPPT CONFIGURATION NOTE

Set the BQ25570 MPPT ratio to 80% by selecting R_OC1 and R_OC2 per the TI datasheet calculator. For the IXYS SLMD121H10L, an MPPT voltage of approximately 2.4 V (80% of ~3 V VOC at 300 lux) is optimal. The reference design is the TI TIDA-00242 evaluation board.

PROJECT 03

Vibration-Powered Machine Health Monitor

PZT cantilever → LTC3588-1 → ATtiny3227 → XBee transmission every 10 min
Harvesting IC
LTC3588-1
Piezo Element
Midé V22BL PZT
Storage
470 µF tantalum
MCU
ATtiny3227
Accelerometer
ADXL362 (ULP)
Radio
XBee 900HP

IMPORTANT: RESONANCE MATCHING

A piezoelectric cantilever only harvests efficiently when its natural resonant frequency matches the vibration source. Verify the vibration spectrum of your target machine with an accelerometer log before sizing the cantilever. A 2 Hz mismatch between cantilever resonance and source frequency can reduce output power by over 80%.

PROJECT 04

Hot Water Pipe Temperature Logger

TEG pipe clamp → LTC3108 → SAMD21 → SX1262 LoRa uplink
Harvesting IC
LTC3108
TEG
Laird UTG-57-40-F2
Transformer
LPR6235 1:100
Storage
0.1 F / 5 V supercap
MCU
SAMD21 (Cortex-M0+)
Radio
SX1262 LoRa

Power Budget — Project 4

Power Budget Analysis — SAMD21 + LoRa System
Component State Current Duration Average Power
SAMD21 Standby sleep 5 µA ~299.8 sec / 5 min 16.5 µW
SAMD21 Active (wake + compute) 3 mA @ 3.3 V ~200 ms 6.6 µW avg
SX1262 LoRa TX (14 dBm) ~87 mA ~150 ms ~435 µW avg
LTC3108 IQ (always on) 6 µA @ VIN Continuous ~0.5 µW
Total average ~459 µW
TEG harvest 40 mm, 35°C dT ~14,000 µW
PROJECT 05

Batteryless Soil Moisture Sensor for Remote Agriculture

Outdoor PV → SPV1050 (MPPT) → STM32L0 → Zigbee transmission every 30 min
Harvesting IC
SPV1050
PV Panel
50 cm² Monocrystalline
Storage
Thin-film LiPON
MCU
STM32L053 (Cortex-M0+)
Sensor
Capacitive + DS18B20
Radio
CC2530 Zigbee


THIN-FILM BATTERY VS. SUPERCAPACITOR

For multi-day outages (cloudy agricultural environments), a thin-film LiPON battery is preferred over a supercapacitor because its self-discharge rate is measured in months, not days. The SPV1050 supports direct thin-film battery charging with adjustable end-of-charge voltage — set VEOC to 4.1 V for extended cycle life. Supercapacitors discharge ~20% per day in typical ambient conditions.

Critical Design Pitfalls and How to Fix Them

Pitfall 1: Wrong transformer or leakage inductance too high

Problem: The circuit fails to oscillate or oscillates poorly, and VAUX never charges above 0.3 V despite a valid VIN signal.

Root cause: The transformer’s leakage inductance is too high relative to its magnetizing inductance, or the winding capacitance is resonating at a frequency the LTC3108 cannot track. Substituting a generic audio transformer with unmeasured winding capacitance causes this.

Fix: Use only the Coilcraft or Würth transformers from ADI Table 5. Measure leakage inductance with an LCR meter before populating. Do not substitute similar-value inductors — the turns ratio and core material matter critically.

Pitfall 2: High-leakage storage capacitor draining VSTORE overnight

Problem: The sensor node worked during initial testing (continuous harvesting) but fails to restart after an overnight shutdown period.

Root cause: Generic aluminum electrolytic capacitors have leakage currents of 10–100 µA at rated voltage, which outpaces the trickle charge available from a small TEG in a low-gradient environment. The supercapacitor drains completely before morning.

Fix: Use low-leakage supercapacitors — ADI’s Table 6 recommends Panasonic EECEN series or AVX TPSX series. Measure actual leakage at the operating voltage, not at rated voltage.

Pitfall 3: Brown-out reset loop due to incorrect PGD-pin usage

Problem: The MCU boots, begins transmitting, then resets repeatedly in a fast loop, consuming more power than harvested and preventing VOUT from ever stabilizing.

Root cause: The MCU is waking on PGD rising edge but starting its radio immediately at full power, collapsing VOUT below the LTC3108 regulation band, pulling PGD low, causing a reset, and repeating.

Fix: After PGD goes high, add a firmware delay of 200–500 ms before enabling the radio, allowing VOUT to charge to full regulation. Also size the VOUT capacitor for the maximum expected load current burst:

$C = I_load × t_burst / ΔV_allowed.$

For a 90 mA radio burst over 150 ms with 200 mV tolerable droop:

$C = 0.09 × 0.150 / 0.200 = 67.5 mF.$

Use a 100 mF VOUT capacitor for this load.

Pitfall 4: PCB layout resistance in the primary winding path

Problem: The circuit cold-starts at lab temperatures but fails below 10°C (reduced TEG output).

Root cause: High trace resistance between VIN, transformer primary, SW pin, and GND creates a voltage drop that effectively raises the minimum operational VIN. The IC can carry up to 500 mA in the switch path; even 10 mΩ of stray resistance creates a 5 mV drop at 500 mA, enough to prevent cold-start at marginal input voltages.

Fix: Route VIN, SW, and GND with minimum trace length, maximum width (≥ 1 mm for 1 oz copper on a two-layer board), and no vias in the primary path. Therefore, use a ground plane under the IC, and ensure the thermal pad is soldered in DFN-12 packages.

Symptom Root Cause Fix
VAUX < 0.3 V Wrong transformer / high leakage Use Coilcraft / Würth specified part
Fails after long OFF High-leakage supercap Use Panasonic EECEN / AVX TPSX
MCU reset loop Radio starts too early Add 200–500 ms delay after PGD
Cold start <10°C fail Trace resistance drops VIN ≥1 mm trace, no vias, solid pad
Low efficiency TEG RS > 3 Ω Use TEG RS ≤ 2 Ω (measure hot)

Simulating and Bench-Testing LTC3108-Based Circuits

LTspice simulation setup

Analog Devices provides an LTspice model for the LTC3108. After importing the model file (LTC3108.lib from the ADI website), the TEG can be modeled as a voltage source in series with a resistance matching the TEG’s internal source resistance. Use a Thevenin equivalent: V_TEG in series with R_source.

For the transformer, LTspice requires specifying both magnetizing inductance and the coupling coefficient. For the Coilcraft LPR6235 at 1:100 turns ratio, use L_primary = 47 µH, L_secondary = 470 mH, coupling coefficient K = 0.97. Specifically, winding resistance should be set to the measured DCR (typically 0.2 Ω primary, 18 Ω secondary for this part).

LTspice TEG Thevenin Model — LTC3108 Simulation Setup
V_TEG VIN 0 80m
80 mV open-circuit (5°C dT on 30mm TEG)
R_src VIN VIN_node 1.6
1.6 Ω source resistance (Laird UTG-57-40)
K_T1 L_pri L_sec 0.97
Coupling coefficient for LPR6235 transformer
C_load VOUT 0 470µF
Output bulk capacitor
C_store VSTORE 0 100 mF
Supercapacitor energy storage

Bench measurement methodology

Measuring quiescent currents in the µA range requires a precision source-measure unit (SMU) or a high-sensitivity ammeter (Keithley 2450 or similar). Standard DMMs in series with the circuit introduce sufficient series resistance and voltage drop to disturb the measurement.

For cold-start characterization, use a precision DC power supply set to the target VIN (e.g., 50 mV), output impedance set to simulate the TEG source resistance (use a series resistor on the bench). Monitor VAUX, VLDO, and VOUT on separate oscilloscope channels to observe the startup sequencing described in the datasheet. Cold-start time from 20 mV with a 0.1 F supercapacitor is typically 60–180 seconds — be patient during initial characterization.

Evaluation board: ADI DC1582B-A

ADI offers the DC1582B-A evaluation board for the LTC3108 and the DC1582B-B for the LTC3108-1. These boards include jumper-selectable turns-ratio transformers, test points at every key node, and a header for connecting a Silicon Labs EFM32 Gecko starter kit as the load MCU. For initial feasibility testing with a new TEG source, evaluating this board before committing to a custom PCB layout saves significant debug time.

Energy Harvesting ICs in 2025–2026: Trends Makers Should Track

Sub-5 mV cold-start ICs: closing the gap on perpetual-energy devices

The EM Microelectronic EM8900, capable of cold-starting from 5 mV, opens applications where the LTC3108’s 20 mV threshold is a barrier — sub-1°C thermal gradient harvesting, very small body-surface TEGs, and harvesting from thermocouple arrays on room-temperature surfaces. As of 2025, the EM8900 is priced at approximately $0.79 in single quantities, making it accessible for maker projects.

Intermittency-aware computing frameworks

A fundamental challenge with energy-harvested systems is that power can disappear mid-computation. Research projects like Chinchilla (Berkeley) and the Rust-based iotedge-intermittent framework use non-volatile SRAM checkpointing to resume computation across power outages transparently. For maker projects, the simplest approach is designing firmware as a series of idempotent tasks: sense → store to EEPROM → transmit → sleep. Each stage is atomic; if power fails between stages, the next startup simply retries from the last committed EEPROM state.

Multi-source IC integration

The trend in commercial IoT deployments is toward ICs that handle two or three harvesting sources simultaneously solar by day, TEG from HVAC heat by night, and RF from a nearby access point as a backup. The e-peas AEM20940 supports this architecture natively. For makers, this trend means that a single-IC, multi-source board is now achievable without complex external power management logic.

Frequently Asked Questions

What is the minimum temperature differential needed to power the LTC3108?

With a properly sized 40 mm × 40 mm TEG and good heatsinking, the LTC3108 can start from temperature differences as low as ~1°C (no-load). For practical operation with MCU and radio, a more realistic requirement is 5–10°C, depending on the TEG size and load. 

Can the LTC3108 charge a lithium-ion battery directly?

No. The LTC3108 does not include Li-ion charging control (CC/CV). It should not be connected directly to a Li-ion cell. Instead, use a dedicated charger IC (e.g., MCP73831). For thin-film batteries, devices like the SPV1050 are more suitable. 

What is the difference between the LTC3108 and the LTC3109?

The LTC3109 supports both DC and low-frequency AC inputs and can handle either polarity, making it suitable for more flexible TEG orientations. The LTC3108 only supports positive DC inputs. Both share similar ultra-low voltage cold-start behavior.

Why does my LTC3108 circuit oscillate but never charge VOUT?

This usually happens when VOUT is loaded too early or too heavily. During startup, the IC prioritizes charging VAUX first. Also, high-leakage capacitors on VOUT can prevent proper charging. Ensure no load is connected during initial startup testing. 

Can I use the LTC3108 with a solar panel instead of a TEG?

Yes, but it is not optimal. The LTC3108 does not include MPPT, so it cannot efficiently track a solar panel’s maximum power point. For solar harvesting, ICs like the BQ25570 or SPV1050 are better choices. 

Conclusion

ICs for energy harvesting have emerged beyond the experimental stage to become available to makers. The LTC3108 continues to be the state-of-the-art device for ultra-low cold-start voltage (20 mV) for TEG and thermopile applications, featuring oscillator, boost converter, LDO, power-good indication, and storage control all in one tiny package of 3×4 mm.

If solar harvesting is the primary source, then the BQ25570 gives MPPT and less quiescent current with the trade-off of higher cold-start voltage. The most integrated circuit for hybrid source and thin film battery charging is the SPV1050, which does not require a separate charger IC.

Five projects that can be designed based on the guidelines presented in this guide span the realistic capability range of current ICs for harvesting: from several microwatts generated from body heat to tens of milliwatts generated from industrial sources. In each project, the design criteria are similar: minimize average power drawn through duty cycling, allocate storage sufficient for the outage period, and choose an IC configuration suitable for the power source.

specialized power management ICs used for power sequencing, monitoring, and energy management in embedded and industrial electronic systems.specialized power management ICs used for power sequencing, monitoring, and energy management in embedded and industrial electronic systems.specialized power management ICs used for power sequencing, monitoring, and energy management in embedded and industrial electronic systems.

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