IXSH35N100A
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1000V 70A 300W TO247AD
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 10mJ (off)
Td (on/off) @ 25°C 80ns/400ns
Current - Collector Pulsed (Icm) 140A
Gate Charge 180nC
Turn Off Time-Nom (toff) 1700 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 35A
Test Condition 800V, 35A, 2.7 Ω, 15V
Turn On Time 300 ns
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Breakdown Voltage 1kV
JEDEC-95 Code TO-247AD
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 3.5V
Turn-Off Delay Time 400 ns
Polarity/Channel Type N-CHANNEL
Rise Time 150ns
Transistor Application POWER CONTROL
Turn On Delay Time 80 ns
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 70A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 300W
Voltage - Rated DC 1kV
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
Pbfree Code yes
Published 2000
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6.500007g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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