Feedback Cap-Max (Crss) 200 pF
DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.0135Ohm
Drain Current-Max (Abs) (ID) 6A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 6A Ta 10.2A Tc
Input Capacitance (Ciss) (Max) @ Vds 1.7pF @ 15V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 13.5m Ω @ 10.2A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 820mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ