IXGF36N300
RoHS 
RoHS compliant
RoHS compliantPackage i4-Pac?-5 (3 Leads)
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 3000V 36A 160W I4-PAK
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Current - Collector Pulsed (Icm) 400A
Gate Charge 136nC
Turn Off Time-Nom (toff) 755 ns
Vce(on) (Max) @ Vge, Ic 5.2V @ 15V, 100A
Turn On Time 221 ns
Voltage - Collector Emitter Breakdown (Max) 3000V
Collector Emitter Breakdown Voltage 3kV
Max Collector Current 36A
Collector Emitter Voltage (VCEO) 5.2V
Polarity/Channel Type N-CHANNEL
Transistor Application GENERAL PURPOSE SWITCHING
Power - Max 160W
Input Type Standard
Case Connection ISOLATED
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 160W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case i4-Pac?-5 (3 Leads)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 28 Weeks
Alternative Model
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