Avalanche Energy Rating (Eas) 350 mJ
Pulsed Drain Current-Max (IDM) 64A
Drain to Source Breakdown Voltage 12V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 16A
Turn-Off Delay Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Gate Charge (Qg) (Max) @ Vgs 26.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Input Capacitance (Ciss) (Max) @ Vds 2085pF @ 12V
Vgs(th) (Max) @ Id 500mV @ 250μA
Rds On (Max) @ Id, Vgs 3m Ω @ 8A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2W Ta 50W Tc
Reach Compliance Code unknown
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ