RCX080N25
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 250V 8A TO220
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Buying Options
Total Price: USD $1.1
Unit Price: USD $1.1
≥1 USD $1.1
≥10 USD $0.90024
≥100 USD $0.699952
≥500 USD $0.593278
≥1000 USD $0.483287
≥3000 USD $0.45496
Inventory: 217
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 4.66 mJ
Pulsed Drain Current-Max (IDM) 32A
Drain to Source Breakdown Voltage 250V
Drain-source On Resistance-Max 0.6Ohm
Drain Current-Max (Abs) (ID) 8A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 8A
Turn-Off Delay Time 28 ns
Fall Time (Typ) 14 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 28ns
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 600m Ω @ 4A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 22 ns
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.23W Ta 35W Tc
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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