IRG4BC20SD-SPBF
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 19A 60W D2PAK
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Buying Options
Total Price: USD $1
Unit Price: USD $1.0032
≥1 USD $1.0032
Inventory: 1416
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 60W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 19A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 32 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 19A
Reverse Recovery Time 37 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.4V
Turn On Time 99 ns
Test Condition 480V, 10A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 10A
Turn Off Time-Nom (toff) 1780 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 38A
Td (on/off) @ 25°C 62ns/690ns
Switching Energy 320μJ (on), 2.58mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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