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Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT Modules 600V 75A DUAL
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

VCEsat-Max 2.45 V
Gate-Emitter Voltage-Max 20V
Collector-Emitter Voltage-Max 600V
Turn Off Time-Nom (toff) 205 ns
Collector Current-Max (IC) 100A
Turn On Time 90 ns
Power Dissipation-Max (Abs) 355W
Polarity/Channel Type N-CHANNEL
Case Connection ISOLATED
Configuration SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Elements 2
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X7
Pin Count 7
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Pbfree Code icon-pbfree no

Physical

Transistor Element Material SILICON
Number of Terminals 7
Surface Mount NO

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