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STP315N10F7

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description STMICROELECTRONICS STP315N10F7 MOSFET Transistor, N Channel, 180 A, 100 V, 0.0023 ohm, 10 V, 3.5 V
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Buying Options
Total Price: USD $4.85
Unit Price: USD $4.8488
≥1 USD $4.8488
≥10 USD $3.845072
≥100 USD $3.295864
≥500 USD $2.929626
≥1000 USD $2.508493
≥3000 USD $2.362017
Inventory: 832
Minimum: 1
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Technical Details

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 329.988449mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Series Automotive, AEC-Q101, DeepGATE?, STripFET? VII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP315
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 315W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 62 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 108ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 148 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 3.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0027Ohm
Pulsed Drain Current-Max (IDM) 720A

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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