MDI150-12A4
RoHS 
RoHS compliant
RoHS compliantPackage Y3-DCB
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1.2KV 180A 5-Pin Y3-DCB
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Width 62mm
Length 110mm
Height 30mm
Technical
VCEsat-Max 3 V
Input Capacitance (Cies) @ Vce 6.6nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 570 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 100A
Turn On Time 170 ns
Input Capacitance 6.6nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 7.5mA
Max Collector Current 180A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 760W
Case Connection ISOLATED
Configuration Single
Number of Elements 1
Pin Count 7
Base Part Number MDI
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 760W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2000
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 5
Package / Case Y3-DCB
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Supply Chain
Factory Lead Time 32 Weeks
Alternative Model
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