IRFB33N15DPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 33A TO-220AB
PDF
/
Buying Options
Total Price: USD $1.06
Unit Price: USD $1.0621
≥1 USD $1.0621
≥10 USD $0.87115
≥100 USD $0.84455
≥500 USD $0.817
≥1000 USD $0.78945
Inventory: 1268
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series HEXFET?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 56Ohm
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Current Rating 33A
Number of Elements 1
Power Dissipation-Max 3.8W Ta 170W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 56m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2020pF @ 25V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 38ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 33A
Threshold Voltage 5.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Nominal Vgs 5.5 V
Dimensions
Height 15.24mm
Length 10.5156mm
Width 4.69mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Alternative Model
Recommended For You
IRFB33N15DPBF+price,IRFB33N15DPBF+datasheet,IRFB33N15DPBF+in stock,buy+IRFB33N15DPBF,finder+IRFB33N15DPBF,IRFB33N15DPBF+tutorials,IRFB33N15DPBF+download