Avalanche Energy Rating (Eas) 750 mJ
DS Breakdown Voltage-Min 500V
Pulsed Drain Current-Max (IDM) 35A
Drain-source On Resistance-Max 0.48Ohm
Continuous Drain Current (ID) 15A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Input Capacitance (Ciss) (Max) @ Vds 4080pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 480m Ω @ 7.5A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 300W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ