FET Feature Schottky Diode (Isolated)
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.2Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.6A
Turn-Off Delay Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 5V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Rds On (Max) @ Id, Vgs 200m Ω @ 1.8A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 830mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ