IRFB4510GPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N CH 100V 62A TO-220AB
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Rds On Max 13.5 mΩ
Input Capacitance 3.18nF
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 62A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Current - Continuous Drain (Id) @ 25°C 62A Tc
Input Capacitance (Ciss) (Max) @ Vds 3180pF @ 50V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 13.5mOhm @ 37A, 10V
FET Type N-Channel
Power Dissipation 140W
Power Dissipation-Max 140W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2012
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package TO-220AB
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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