IXFL44N80
RoHS
/
Package ISOPLUS264?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
IXYS IXFL44N80 N-channel MOSFET Transistor, 44 A, 800 V, 3-Pin ISOPLUS264
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS264?
Number of Pins 264
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 550W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 550W
Case Connection ISOLATED
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 165m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Rise Time 48ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 44A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.165Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 176A
Avalanche Energy Rating (Eas) 4000 mJ
Dimensions
Height 26.42mm
Length 20.29mm
Width 5.21mm
Compliance
RoHS Status RoHS Compliant
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