Pulsed Drain Current-Max (IDM) 116A
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 29A
Turn-Off Delay Time 111 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 80.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Input Capacitance (Ciss) (Max) @ Vds 2785pF @ 50V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 110m Ω @ 14.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 40W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ