SIHP5N50D-E3
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS
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Buying Options
Total Price: USD $0.81
Unit Price: USD $0.8056
≥1 USD $0.8056
≥10 USD $0.6612
≥100 USD $0.6403
≥500 USD $0.62035
≥1000 USD $0.59945
Inventory: 986
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
DS Breakdown Voltage-Min 500V
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 5.3A
Turn-Off Delay Time 14 ns
Fall Time (Typ) 11 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Rise Time 11ns
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.3A Tc
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 12 ns
Power Dissipation 104W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 104W Tc
Number of Channels 1
Number of Elements 1
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6.000006g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 13 Weeks
Alternative Model
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