VN0300L-G-P002
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET,N-CHANNEL ENHANCEMENT-MODE,30V,1.2 Ohm3 TO-92RVT/R
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Buying Options
Total Price: USD $1.36
Unit Price: USD $1.3552
≥1 USD $1.3552
≥10 USD $1.1264
≥100 USD $1.012
Inventory: 1123
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 20V
Current - Continuous Drain (Id) @ 25°C 640mA Tj
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 640mA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.64A
Drain to Source Breakdown Voltage 30V
Feedback Cap-Max (Crss) 50 pF
Dimensions
Height 5.33mm
Length 5.21mm
Width 4.19mm
Compliance
RoHS Status ROHS3 Compliant
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