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RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 135A D2PAK
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Buying Options
Total Price: USD $7.34
Unit Price: USD $7.3359
≥1 USD $7.3359
≥10 USD $6.0192
≥100 USD $5.8311
≥500 USD $5.643
≥1000 USD $5.4549
Inventory: 1263
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 9.65mm
Length 10.67mm
Height 4.83mm

Technical

Nominal Vgs 2 V
Pulsed Drain Current-Max (IDM) 700A
Drain to Source Breakdown Voltage 55V
Drain-source On Resistance-Max 0.0047Ohm
Drain Current-Max (Abs) (ID) 75A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 135A
Turn-Off Delay Time 68 ns
Fall Time (Typ) 110 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 120 ns
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Current - Continuous Drain (Id) @ 25°C 135A Tc
Input Capacitance (Ciss) (Max) @ Vds 5110pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 4.7m Ω @ 104A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 14 ns
Case Connection DRAIN
Power Dissipation 200W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 200W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
JESD-609 Code e3
Series HEXFET?
Published 2011
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin

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