BSP125 E6327
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 120MA SOT-223
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 0.48A
Drain Current-Max (Abs) (ID) 0.12A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V
Current - Continuous Drain (Id) @ 25°C 120mA Ta
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Vgs(th) (Max) @ Id 2.3V @ 94μA
Rds On (Max) @ Id, Vgs 45 Ω @ 120mA, 10V
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.8W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G4
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 255
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Series SIPMOS?
Published 2007
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Alternative Model
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