SCT20N120H
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
PTD WBG & POWER RF
PDF
/
Buying Options
Total Price: USD $14.27
Unit Price: USD $14.266947
≥1 USD $14.266947
≥10 USD $13.459382
≥100 USD $12.697537
≥500 USD $11.978806
≥1000 USD $11.300761
Inventory: 1088
Minimum: 1
-
+
Technical Details
Technical
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On,Min Rds On) 20V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 20V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 400V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Rds On (Max) @ Id, Vgs 290m Ω @ 10A, 20V
FET Type N-Channel
Power Dissipation-Max 175W Tc
Technology SiCFET (Silicon Carbide)
Part Status Active
Packaging Tape & Reel (TR)
Operating Temperature -55°C~200°C TJ
Physical
Package / Case TO-247-3
Mounting Type Through Hole
Alternative Model
Recommended For You
SCT20N120H+price,SCT20N120H+datasheet,SCT20N120H+in stock,buy+SCT20N120H,finder+SCT20N120H,SCT20N120H+tutorials,SCT20N120H+download