Power Dissipation Ambient-Max 7W
FET Technology HETERO-JUNCTION
DS Breakdown Voltage-Min 9V
Drain Current-Max (Abs) (ID) 0.4A
Continuous Drain Current (ID) 280mA
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 9V
Transistor Application SWITCHING
Operating Mode DEPLETION MODE
Operating Temperature (Max) 165°C
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 225
Subcategory FET RF Small Signal
Moisture Sensitivity Level (MSL) 1