IRF3717TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 20A 8-SOIC
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 32 mJ
DS Breakdown Voltage-Min 20V
Pulsed Drain Current-Max (IDM) 160A
Drain-source On Resistance-Max 0.0044Ohm
Drain Current-Max (Abs) (ID) 20A
JEDEC-95 Code MS-012AA
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Input Capacitance (Ciss) (Max) @ Vds 2890pF @ 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Rds On (Max) @ Id, Vgs 4.4m Ω @ 20A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-G8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Additional Feature GREEN
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Series HEXFET?
Published 2004
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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