FET Feature Schottky Diode (Isolated)
Pulsed Drain Current-Max (IDM) 20A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.09Ohm
Drain Current-Max (Abs) (ID) 2.5A
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 3.7A
Turn-Off Delay Time 14.2 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.5A Tj
Input Capacitance (Ciss) (Max) @ Vds 427pF @ 15V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 70m Ω @ 2A, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 4.8 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 710mW Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ