2SK3666-4-TB-E
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - JFETs
Description
JFET N-CH 30V 0.2W CP
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Resistance - RDS(On) 200Ohm
Voltage - Breakdown (V(BR)GSS) 30V
Voltage - Cutoff (VGS off) @ Id 180mV @ 1μA
Current - Drain (Idss) @ Vds (Vgs=0) 2.5mA @ 10V
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) -30V
Continuous Drain Current (ID) 10mA
Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V
FET Type N-Channel
Power Dissipation 200mW
Element Configuration Single
Base Part Number 2SK3666
Max Power Dissipation 200mW
Terminal Finish Tin/Bismuth (Sn/Bi)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e6
Published 2004
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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