Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage 1.05kV
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 4A
Turn-Off Delay Time 43 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1050V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 100V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 2 Ω @ 2A, 10V
Turn On Delay Time 17.5 ns
Power Dissipation-Max 110W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ