Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 375W
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 74ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.35V
Test Condition 400V, 60A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 60A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 60ns/208ns
Switching Energy 750μJ (on), 550μJ (off)
Gate-Emitter Voltage-Max 20V