NTLGF3501NT1G
RoHS 
RoHS compliant
RoHS compliantPackage 6-VDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
PDF
/
Inventory: 2537
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Physical
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FETKY?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code R-XDSO-C6
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.14W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 275pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.8A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 2.8A
Drain-source On Resistance-Max 0.09Ohm
Pulsed Drain Current-Max (IDM) 13.8A
DS Breakdown Voltage-Min 20V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
NTLGF3501NT1G+price,NTLGF3501NT1G+datasheet,NTLGF3501NT1G+in stock,buy+NTLGF3501NT1G,finder+NTLGF3501NT1G,NTLGF3501NT1G+tutorials,NTLGF3501NT1G+download