Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) Not Applicable
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 235W
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 275 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 58A
Reverse Recovery Time 152 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 60A
Test Condition 960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 20A
Turn Off Time-Nom (toff) 928 ns
Current - Collector Pulsed (Icm) 135A
Td (on/off) @ 25°C 29ns/275ns
Switching Energy 1.66mJ (on), 4.44mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 5.75V