Avalanche Energy Rating (Eas) 500 mJ
Drain-source On Resistance-Max 0.0027Ohm
Drain Current-Max (Abs) (ID) 33A
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 32 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 33A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 12.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Rds On (Max) @ Id, Vgs 2m Ω @ 30A, 8V
Transistor Application SWITCHING
Turn On Delay Time 10.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.1W Ta
Base Part Number CSD16325
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ