Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 80W
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 700 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 1.2 μs
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 29A
Reverse Recovery Time 37 ns
Continuous Drain Current (ID) 10A
Collector Emitter Breakdown Voltage 600V
Drain to Source Breakdown Voltage 600V
Test Condition 480V, 10A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 10A
Turn Off Time-Nom (toff) 3100 ns
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 700ns/1.2μs
Switching Energy 600μJ (on), 5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V