STGB20NB32LZ
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 375V 40A 150W I2PAK
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 2V
Switching Energy 11.8mJ (off)
Td (on/off) @ 25°C 2.3μs/11.5μs
Current - Collector Pulsed (Icm) 80A
Gate Charge 51nC
Turn Off Time-Nom (toff) 15900 ns
Vce(on) (Max) @ Vge, Ic 2V @ 4.5V, 20A
Test Condition 250V, 20A, 1k Ω, 4.5V
Turn On Time 2900 ns
Collector Emitter Breakdown Voltage 375V
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 2V
Polarity/Channel Type N-CHANNEL
Rise Time 600ns
Transistor Application AUTOMOTIVE IGNITION
Power - Max 150W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number STGB20
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 20A
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Max Power Dissipation 150W
Voltage - Rated DC 2V
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series PowerMESH?
Packaging Tube
Operating Temperature 175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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