IXFX32N100P
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 32A PLUS247
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Buying Options
Total Price: USD $19.87
Unit Price: USD $19.8704
≥1 USD $19.8704
≥10 USD $16.47301
≥100 USD $15.44341
≥500 USD $13.178361
Inventory: 86
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 1500 mJ
Pulsed Drain Current-Max (IDM) 75A
Drain to Source Breakdown Voltage 1kV
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 32A
Turn-Off Delay Time 76 ns
Fall Time (Typ) 43 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Rise Time 55ns
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 25V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Rds On (Max) @ Id, Vgs 320m Ω @ 16A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 960W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 960W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?, PolarP2?
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 30 Weeks
Alternative Model
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