RGT80TS65DGC11
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 650V 70A 234W TO-247N
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Buying Options
Total Price: USD $2.76
Unit Price: USD $2.7632
≥1 USD $2.7632
≥10 USD $2.18856
≥100 USD $1.87587
≥500 USD $1.8348
Inventory: 94
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC Unknown
Technical
Td (on/off) @ 25°C 34ns/119ns
Current - Collector Pulsed (Icm) 120A
Gate Charge 79nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 206 ns
Continuous Collector Current 40A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Test Condition 400V, 40A, 10 Ω, 15V
Turn On Time 90 ns
Collector Emitter Saturation Voltage 1.65V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 58 ns
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 650V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 234W
Input Type Standard
Element Configuration Single
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 234W
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2014
Packaging Tube
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 38.000013g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 17 Weeks
Alternative Model
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