Drive Voltage (Max Rds On,Min Rds On) 18V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 51nC @ 18V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Input Capacitance (Ciss) (Max) @ Vds 574pF @ 800V
Vgs(th) (Max) @ Id 5.6V @ 3.81mA
Rds On (Max) @ Id, Vgs 137m Ω @ 7.6A, 18V
Power Dissipation-Max 134W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology SiCFET (Silicon Carbide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101
Operating Temperature 175°C TJ