Switching Energy 1.1mJ (on), 600μJ (off)
Td (on/off) @ 25°C 60ns/190ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
Test Condition 300V, 50A, 5 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 100 ns
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 2.2V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ