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SGP10N60RUFDTU

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT Transistors Dis Short Circuit Rated IGBT
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Buying Options
Total Price: USD $1.68
Unit Price: USD $1.68245
≥1 USD $1.68245
≥10 USD $1.3813
≥100 USD $1.3376
≥500 USD $1.29485
≥1000 USD $1.25115
Inventory: 1173
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Technical

Fall Time-Max (tf) 220 ns
Gate-Emitter Thr Voltage-Max 8V
Gate-Emitter Voltage-Max 20V
Switching Energy 141μJ (on), 215μJ (off)
Td (on/off) @ 25°C 15ns/36ns
Current - Collector Pulsed (Icm) 30A
Gate Charge 30nC
Turn Off Time-Nom (toff) 284 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 10A
Test Condition 300V, 10A, 20 Ω, 15V
Turn On Time 49 ns
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 42 ns
Max Collector Current 16A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Input Type Standard
Power Dissipation 75W
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Base Part Number SG*10N60
Current Rating 10A
Max Power Dissipation 208W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2013
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 1.8g
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 13 Weeks

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