Fall Time-Max (tf) 220 ns
Gate-Emitter Thr Voltage-Max 8V
Gate-Emitter Voltage-Max 20V
Switching Energy 141μJ (on), 215μJ (off)
Td (on/off) @ 25°C 15ns/36ns
Current - Collector Pulsed (Icm) 30A
Turn Off Time-Nom (toff) 284 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 10A
Test Condition 300V, 10A, 20 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 42 ns
Max Collector Current 16A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Element Configuration Single
Base Part Number SG*10N60
Max Power Dissipation 208W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ