CMF10120D
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
CREECMF10120DN CH, SIC PWR MOSFET, 1200V, 24A, TO247-3
PDF
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Buying Options
Total Price: USD $22.12
Unit Price: USD $22.1198
≥1 USD $22.1198
≥10 USD $18.14975
≥100 USD $17.5826
≥500 USD $17.01545
≥1000 USD $16.4483
Inventory: 1177
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC Unknown
Radiation Hardening No
Dimensions
Width 5.21mm
Length 16.13mm
Height 21.1mm
Technical
Nominal Vgs 2.5 V
Rds On Max 220 mΩ
Drain to Source Resistance 160mOhm
Input Capacitance 928pF
Drain to Source Breakdown Voltage 1.2kV
Gate to Source Voltage (Vgs) 25V
Threshold Voltage 2.5V
Continuous Drain Current (ID) 24A
Turn-Off Delay Time 38 ns
Fall Time (Typ) 21 ns
Vgs (Max) +25V, -5V
Drive Voltage (Max Rds On,Min Rds On) 20V
Drain to Source Voltage (Vdss) 1200V
Rise Time 34ns
Gate Charge (Qg) (Max) @ Vgs 47.1nC @ 20V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Input Capacitance (Ciss) (Max) @ Vds 928pF @ 800V
Vgs(th) (Max) @ Id 4V @ 500μA
Rds On (Max) @ Id, Vgs 220mOhm @ 10A, 20V
FET Type N-Channel
Turn On Delay Time 8.8 ns
Power Dissipation 152W
Element Configuration Single
Power Dissipation-Max 134W Tc
Number of Elements 1
Technology SiCFET (Silicon Carbide)
Min Operating Temperature -55°C
Max Operating Temperature 135°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series Z-FET?
Published 2012
Packaging Tube
Operating Temperature -55°C~135°C TJ
Physical
Supplier Device Package TO-247
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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