Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 223W
Element Configuration Single
Turn On Delay Time 116 ns
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 292 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Reverse Recovery Time 85ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.65V
Test Condition 400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 116ns/292ns
Switching Energy 1.1mJ (on), 600μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V