FQP8N90C
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 900V N-Ch Q-FET advance C-Series
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Buying Options
Total Price: USD $7.52
Unit Price: USD $7.51735
≥1 USD $7.51735
≥10 USD $6.16835
≥100 USD $5.9755
≥500 USD $5.78265
≥1000 USD $5.59075
Inventory: 1452
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 850 mJ
Pulsed Drain Current-Max (IDM) 25A
Drain to Source Breakdown Voltage 900V
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 6.3A
Turn-Off Delay Time 70 ns
Fall Time (Typ) 70 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 110 ns
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6.3A Tc
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 1.9 Ω @ 3.15A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 40 ns
Power Dissipation 171W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 171W Tc
Number of Elements 1
Current Rating 6.3A
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 900V
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series QFET?
Published 2013
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 1.8g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 5 Weeks
Alternative Model
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