Fall Time-Max (tf) 24.8 ns
Gate-Emitter Thr Voltage-Max 8.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 150μJ (on), 50μJ (off)
Td (on/off) @ 25°C 8ns/52.2ns
Current - Collector Pulsed (Icm) 30A
Turn Off Time-Nom (toff) 89.3 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 10A
Test Condition 400V, 10A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 37.7 ns
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Element Configuration Single
Max Power Dissipation 42W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ