FGH50T65UPD
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors 650 V 100 A 240 W
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Buying Options
Total Price: USD $5.45
Unit Price: USD $5.4472
≥1 USD $5.4472
≥10 USD $4.34515
≥100 USD $3.88784
≥500 USD $3.43046
≥1000 USD $3.08741
≥3000 USD $2.893018
Inventory: 413
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 50 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 5 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 340W
Number of Elements 1
Rise Time-Max 77 ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 340W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 100A
Reverse Recovery Time 53 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 101 ns
Test Condition 400V, 50A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 50A
Turn Off Time-Nom (toff) 185 ns
IGBT Type Trench Field Stop
Gate Charge 230nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 32ns/160ns
Switching Energy 2.7mJ (on), 740μJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
Fall Time-Max (tf) 29 ns
Dimensions
Height 20.82mm
Length 15.87mm
Width 4.82mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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