IPP60R190E6
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 20.2A TO220
PDF
/
Buying Options
Total Price: USD $2.21
Unit Price: USD $2.21255
≥1 USD $2.21255
≥10 USD $1.81545
≥100 USD $1.75845
≥500 USD $1.70145
≥1000 USD $1.6454
Inventory: 8748
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Capacitance - Input 1.4nF
Rds On Max 190 mΩ
Drain to Source Resistance 170mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 418 mJ
Pulsed Drain Current-Max (IDM) 59A
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 20.2A
Turn-Off Delay Time 90 ns
Fall Time (Typ) 8 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 600V
Rise Time 10ns
Halogen Free Halogen Free
Transistor Application SWITCHING
Turn On Delay Time 12 ns
Power Dissipation 151W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 151W
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Subcategory FET General Purpose Power
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Number of Terminations 3
Part Status Active
Pbfree Code yes
Published 2008
Physical
Number of Pins 3
Surface Mount NO
Package / Case TO-220-3
Contact Plating Tin
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
Recommended For You
IPP60R190E6+price,IPP60R190E6+datasheet,IPP60R190E6+in stock,buy+IPP60R190E6,finder+IPP60R190E6,IPP60R190E6+tutorials,IPP60R190E6+download