Fall Time-Max (tf) 2000 ns
Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.1mJ (on), 21mJ (off)
Td (on/off) @ 25°C 18ns/250ns
Current - Collector Pulsed (Icm) 90A
Turn Off Time-Nom (toff) 2870 ns
Vce(on) (Max) @ Vge, Ic 1.4V @ 15V, 30A
Test Condition 400V, 30A, 6.8 Ω, 15V
Collector Emitter Saturation Voltage 600V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 35 ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 250 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 480W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ