IRL3303PBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 38A TO-220AB
PDF
/
Buying Options
Total Price: USD $0.94
Unit Price: USD $0.9405
≥1 USD $0.9405
≥10 USD $0.7714
≥100 USD $0.74765
≥500 USD $0.72295
≥1000 USD $0.6992
Inventory: 1109
Minimum: 1
-
+
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 26MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 34A
Lead Pitch 2.54mm
Power Dissipation-Max 68W Tc
Element Configuration Single
Power Dissipation 56W
Turn On Delay Time 7.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 38A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 200ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 38A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Input Capacitance 870pF
Drain to Source Resistance 40mOhm
Rds On Max 26 mΩ
Nominal Vgs 1 V
Dimensions
Height 15.24mm
Length 10.5156mm
Width 4.69mm
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
IRL3303PBF+price,IRL3303PBF+datasheet,IRL3303PBF+in stock,buy+IRL3303PBF,finder+IRL3303PBF,IRL3303PBF+tutorials,IRL3303PBF+download