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FGD3N60UNDF

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT Transistors 600V, 3A Short Circuit Rated IGBT
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Buying Options
Total Price: USD $27.1
Unit Price: USD $27.09685
≥1 USD $27.09685
≥10 USD $22.23285
≥100 USD $21.5384
≥500 USD $20.84395
≥1000 USD $20.14855
Inventory: 9974
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Dimensions

Width 6.1mm
Length 6.6mm
Height 2.3mm

Technical

Gate-Emitter Thr Voltage-Max 8.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 52μJ (on), 30μJ (off)
Td (on/off) @ 25°C 5.5ns/22ns
Current - Collector Pulsed (Icm) 9A
Gate Charge 1.6nC
IGBT Type NPT
Turn Off Time-Nom (toff) 146 ns
Vce(on) (Max) @ Vge, Ic 2.52V @ 15V, 3A
Test Condition 400V, 3A, 10 Ω, 15V
Turn On Time 7.4 ns
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.4V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 21ns
Max Collector Current 6A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 60W
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSSO-G2
Base Part Number FGD3N60
Terminal Form GULL WING
Max Power Dissipation 60W
Subcategory Insulated Gate BIP Transistors
HTS Code 8541.29.00.95
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2013
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 260.37mg
Number of Pins 3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 7 Weeks

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