Gate-Emitter Thr Voltage-Max 8.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 52μJ (on), 30μJ (off)
Td (on/off) @ 25°C 5.5ns/22ns
Current - Collector Pulsed (Icm) 9A
Turn Off Time-Nom (toff) 146 ns
Vce(on) (Max) @ Vge, Ic 2.52V @ 15V, 3A
Test Condition 400V, 3A, 10 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.4V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 21ns
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 60W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ