Drain to Source Resistance 2.1mOhm
FET Feature Schottky Diode (Body)
Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 37A
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 75nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 37A Ta 197A Tc
Input Capacitance (Ciss) (Max) @ Vds 6560pF @ 13V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Rds On (Max) @ Id, Vgs 1.3mOhm @ 37A, 10V
Power Dissipation-Max 2.8W Ta 78W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ