Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 250μJ (on), 1mJ (off)
Td (on/off) @ 25°C 40ns/600ns
Current - Collector Pulsed (Icm) 25A
Turn Off Time-Nom (toff) 1420 ns
Vce(on) (Max) @ Vge, Ic 1.5V @ 10V, 3A
Test Condition 480V, 3A, 470 Ω, 10V
Max Breakdown Voltage 600V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 234 ns
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 40W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)