Max Junction Temperature (Tj) 150°C
Pulsed Drain Current-Max (IDM) 280A
Drain to Source Breakdown Voltage -55V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -42A
Turn-Off Delay Time 51 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 55V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 20m Ω @ 42A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 170W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature HIGH RELIABILITY, AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ