Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 452μJ (on), 141μJ (off)
Td (on/off) @ 25°C 12ns/91ns
Current - Collector Pulsed (Icm) 60A
Turn Off Time-Nom (toff) 109 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A
Test Condition 400V, 20A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.9V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 26.7 ns
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 75W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ